CGD Introduced A Powerful Hybrid Switch Solution to EV Traction Inverters At IEDM

Join Us for a Breakthrough Talk on "ICeGaN® Combo" – A Powerful Hybrid Switch Solution to EV Traction Inverters

Cambridge GaN Devices’ CTO Professor Florin Udrea will present a groundbreaking innovation for the first time at the International Electron Devices Meeting (IEDM) in San Francisco this December 7-11. During the talk, Prof. Udrea will unveil the revolutionary ICeGaN® Combo concept — a parallel combination of an intelligent GaN HEMT (ICeGaN®) with an IGBT , aiming to address one of the major problems that a number of applications such EV traction inverters have, that of: the poor light load efficiency. Join Prof. Udrea to deep dive into why ICeGaN® Combo is a game-changer:
• Breaking Barriers for GaN: While GaN HEMTs are celebrated for their high switching frequency and efficiency, they’ve often been confined to low-power applications. The ICeGaN® Combo unlocks GaN’s potential for high-power use cases. • Enhanced light-load efficiency for EV Inverters: With unparalleled light-load efficiency and robust high-power performance, this innovative ICeGaN® Combo switch is a good perfect fit for electric vehicle (EV) inverters, where light-load operation dominates > 85% of its uses. • The Best of Both Worlds: The ICeGaN® excels in light-load, low-temperature operation with smart integrated features, while the IGBT shines in high-power, high-temperature conditions, including offering avalanche capability. • A Viable Alternative to SiC: Providing a superior balance of efficiency, cost, and robustness, the ICeGaN® Combo is a viable alternative to SiC or hybrid SiC and IGBT solutions in the growing market for high-efficiency EV inverters.

Be among the first to learn how the ICeGaN® Combo is pushing the boundaries of GaN technology and reshaping the future of power electronics.

Presentation title: Combo ICeGaN: The combination of a smart GaN HEMT and an IGBT (Invited) Check the proceedings.