News

Cambridge GaN Devices is taking part in two international events aimed at increasing the resilience of the semiconductor value chain and promoting information exchange and closer coordination between governments on semiconductors.

Cambridge GaN Devices (CGD) has launched new ICeGaN™ P2 series ICs featuring RDS(on) levels down to 25 mΩ supporting multi kW power levels with the highest efficiency for high-power applications such as data centres, inverters, motor drives and more.

Cambridge GaN Devices (CGD) is partnering with Qorvo®, (Nasdaq: QRVO), a leading global provider of connectivity and power solutions, to develop a reference design and evaluation kit (EVK) that showcases GaN for motor control applications.

Cambridge GaN Devices (CGD) has announced two new packages for the company’s ICeGaN™ family of GaN power ICs that offer enhanced thermal performance and simplify inspection.

Cambridge GaN Devices (CGD) has signed a Memorandum of Understanding with Industrial Technology Research Institute (ITRI) of Taiwan to solidify a partnership in developing high performance GaN solutions for USB-PD adaptors.

Cambridge GaN Devices (CGD) will take the opportunity afforded by PCIM, Europe’s leading power electronics exhibition and conference (Nuremberg Messe, 11-13th June) to demonstrate how the company’s product portfolio is developing to address higher power applications such as motor drives, inverters and data centres, as well as lower power, ultra-compact smart portable device adapters and chargers.

At the APEC 2024, IEEE Applied Power Electronics Conference and Exposition, CGD is introducing new reference designs and showing demos which address the broad and diverse industrial market.

‘Knowledge’ is a huge and broad subject, so it is important to define what we really mean if the term is to have value.

Cambridge GaN Devices (CGD) has signed a tripartite agreement with Chicony Power Technology Co., Ltd (TWSE: 6412) of Taiwan and Cambridge University Technical Services (CUTS), UK, to conceive and develop advanced, efficient, high power-density adapters and data centre power products using GaN.

Establishing a clear purpose and maintaining alignment during a scale-up phase lays the groundwork for a stable and prosperous business in the long haul.

ICeGaN™ GaN HEMT System-on-Chip (SoC) was awarded “Best Demo” at the Innovation Zone of TSMC’s 2023 Europe Technology Symposium.

Cambridge GaN Devices (CGD) has signed a distribution agreement with Singapore-based Supreme Components International Pte Ltd (SCI), providing support for customers across the Asia-Pacific region.

Cambridge GaN Devices (CGD) will exhibit for the first time at PCIM Asia, the only exhibition in China specialising in power electronics and its applications in the fields of intelligent motion, renewable energy and energy management.

Cambridge GaN Devices (CGD) has announced the signing of a distribution deal with high-service leader, DigiKey. Under the terms of the global agreement, DigiKey will hold substantial stocks of CGD’s easy-to-use, rugged and highly-efficient ICeGaN™ HEMTs and related products.

Cambridge GaN Devices (CGD) announces that co-founder and CTO, Professor Florin Udrea was recently inducted into the prestigious ISPSD (International Symposium on Power Semiconductor Devices) Hall of Fame.

Cambridge GaN Devices (CGD) has introduced a range of Application Interface Boards that allow designers to try out the company’s rugged, easy-to-use ICeGaN™ HEMTs in existing circuits in place of competing MOSFET or GaN devices without having to re-layout the PCB.

CEO Giorgia Longobardi is invited to attend the exclusive event GSA Global Leadership Summit in Tokyo, and gives a speech on possible influence of diversity, equity and inclusion on semiconductor industry.

The adoption of GaN has been constrained by concerns over drive complexity, sensitivity to over-voltage and false-switching. This webinar will discuss how ICeGaN can deliver ease-of-use and improve performance on the application side.

CGD releases the second series of ICeGaN ICs at PCIM Europe 2023.

By Prof. Florin Udrea – CTO, Cambridge GaN Devices

A personal view on leadership by Giorgia Longobardi, CEO, Cambridge GaN Devices

Test Cris

French public R&I organisation to use CGD’s GaN HEMTs in innovative, next-gen automotive inverter design

Funding led by Parkwalk Advisors and BGF enables CGD to deliver mass production of its GaN transistor family and contribute to the global sustainability movement.

Monolithic SMART GaN HEMTs “drive like silicon“; reduce BOM count; deliver class-leading reliability performance

Cambridge GaN Devices to sign an agreement with Neways to develop high efficiency, photovoltaic solar inverter products based on gallium nitride technology at Electronica 2022.

Cambridge GaN Devices will participate for the first time at Electronica – Europe’s largest Electronics event.

Clean tech company secures Suite 8 at The Jeffreys Building at St John’s Innovation Park.

CEO Dr. Giorgia Longobardi will discuss why GaN should be the answer for greener energy consumption in the future.

Co-Founder and CEO Dr. Giorgia Longobardi will be discussing 'GaN Power Devices and their Applications' on Industry Applications Society's (IAS's) live webinar on 14th September.

Dr. Giorgia Longobardi gives a talk on the impact of gallium nitride on the environment.

This is a summary of CGD's activities at APEC.

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More than 5 megatons of CO2 emissions can be saved each year over the next decade using Gallium Nitride (GaN)-based IC technology to increase the efficiency of data centre server power supplies.

Co-Founder and CEO Dr. Giorgia Longobardi receives an interview from Enterprising Minds, talking about her stories with CGD and University of Cambridge.