GaN made simple: Visit Cambridge GaN Devices at electronica 2022 to find out how
Cambridge GaN Devices in mass production and scaling up innovative product range
Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible, will participate for the first time at Electronica – Europe’s largest Electronics event – when the company will take an active part in the conference proceedings as well as show innovative GaN devices and discuss strategic partnerships.
15-18 November, Hall C3, Booth 535, Messe München, Munich, Germany
Talks
On November 16. Dr. Nirmana Perera will give a speech at Embedded Platforms Conference about 'The challenges & possibilities of GaN devices in Parallel'. Both static and dynamic current sharing in power GaN HEMTs will be discussed. The influence of device parameter distribution on key parameters will be shared together with simulated and prototype test results. Both talks will be given at ICM.
Exhibitions
ICeGaN™ 650V H1 series transistors that can be driven like a MOSFET, without the need for special gate drivers, complex and lossy driving circuits, negative voltage supply requirements or additional clamping components. CGD’s H1 series are SINGLE CHIP eMode HEMT, with 3V threshold voltage, with real 0V turnOFF and with a revolutionary gate concept that can be operated up to 20V. No cascode, no complex multi-chip configurations, no thermally complex integrated solutions: a single chip with embedded proprietary logic which enables the coupling with standard gate drivers or controllers.
