650 V / 130 mOhm GaN HEMT with ICeGaN™ Gate and Current Sense

The CGD65B130S2 is an enhancement mode GaN-on-silicon power transistor, exploiting the unique material properties of GaN to deliver high current, high breakdown voltage and high switching frequency for a wide range of electronics applications.

The CGD65B130S2 features CGD’s ICeGaN™ gate technology enabling compatibility with virtually all gate drivers and controller chips available. The integrated current sense function eliminates a separate current sense resistor and the associated efficiency losses. Because no external sense resistor is needed, the device can be directly soldered to the large copper area of the ground plane, improving the thermal performance, and simplifying the thermal design.

It comes in a DFN 5x6 SMD package to support high frequency operation while ensuring the highest thermal performance.

Applications:

• PSUs, Industrial SMPS and inverters
• Mobile chargers, fast-chargers
• AC adapters
• Notebook adapters
• Gaming PSUs
• PC power
• LED lighting
• ClassD Audio
• TV and wireless power
• PV micro-inverters
• SMPS and converters in single-switch and half-bridge topologies with hard- or soft-switching
• AC/DC and DC/DC converters
• AC inverters

Topologies:

• Quasi-resonant flyback and Active Clamp flyback
• Totem pole and single-switch PFC
• LLC, PSFB DC/DC converters at high frequency
• ClassD and ClassE