H2 series 650 V / 55 mΩ GaN HEMT with ICeGaN™ Gate, Current Sense and NL³ Circuit

Introducing the CGD65A055SH2, an enhancement mode GaN-on-silicon power transistor that capitalizes on the unique material properties of GaN to deliver high current, high breakdown voltage, and high switching frequency for a wide range of electronics applications.

Featuring CGD's ICeGaN gate technology, the CGD65A055SH2 offers compatibility with almost all gate drivers and controller chips. The integrated current sense function eliminates the need for a separate current sense resistor in series with the source, reducing efficiency losses. As a result, the device can be directly soldered to the large copper area of the ground plane, enhancing thermal performance and simplifying thermal design.

The H2 series ICeGaN also incorporates an advanced NL³ Circuit, leading to record low power losses at No Load and Light Load operations.

Packaged in a DFN 8x8 SMD, the CGD65A055SH2 supports high-frequency operation while ensuring exceptional thermal performance.

Applications:

• PSUs, Industrial SMPS and inverters
• AC/DC and DC/DC converters
• AC inverters
• Server power and data centres
• Telecom rectifiers
• Gaming PSUs
• PC power
• LED drivers
• High power ClassD Audio Amplifiers
• General purpose SMPS
• PV inverters

Topologies:

• Totem pole and single-switch PFC
• Quasi-resonant flyback and Active Clamp flyback
• LLC, PSFB DC/DC converters at high frequency