CGD Launches New GaN Power ICs
Cambridge GaN Devices (CGD) has launched new ICeGaN™ P2 series ICs featuring RDS(on) levels down to 25 mΩ. The new series supports multi kW power levels with the highest efficiency for high-power applications such as data centres, inverters, motor drives and more. Visit us at PCIM in Nuremberg during June 11-13 for demos.
CGD Speaks at GSA International Semiconductor Conference
Watch CEO Giorgia Longobardi's presentation at Global Semiconductor Alliance International Semiconductor Conference in London, during which possible contributions of adopting GaN in power intensive applications for achieving the net-zero target is discussed.
CGD Launches New GaN Power ICs
Cambridge GaN Devices (CGD) has launched new ICeGaN™ P2 series ICs featuring RDS(on) levels down to 25 mΩ. The new series supports multi kW power levels with the highest efficiency for high-power applications such as data centres, inverters, motor drives and more. Visit us at PCIM in Nuremberg during June 11-13 for demos.
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Introducing ICeGaN™ Technology CMS TEST
Integrated Circuit Enhancement Mode GaN: a novel platform with state-of-the-art static and dynamic performance increased ease-of-use and intelligent temperature control for the internal gate terminal for enhanced gate reliability. Unlike other existing GaN devices, our smart ICeGaN™ transistor can be operated with standard silicon gate drivers and does not require negative voltages for shutdown, hence removing the need for external, costly driving and clamping interfaces. Finally, a GaN power transistor that can be operated like a MOSFET.
As electrification advances worldwide, so does the demand for highly efficient and innovative solutions. ICeGaN™ power devices can operate at much higher switching frequency with lower losses and lower on-resistance than state-of-the-art silicon devices, delivering higher performance while increasing energy savings by as much as 50%.
GaN transistors make it easy to operate many power topologies at a much higher frequency while still achieving extremely high energy efficiency, thus enabling many applications to become smaller and lighter. CGD's ICeGaN™ integrates several features into their enhancement-mode GaN transistor to run cooler and more reliably than ever before, hence complementing the obvious advantage of GaN vs Silicon in achieving unprecedented power density.
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New GaN Power ICeGaN ICs Enable The Highest Efficiency Levels For Data Centres, Inverters And Industrial SMPS
Cambridge GaN Devices (CGD) has launched new ICeGaN™ P2 series ICs featuring RDS(on) levels down to 25 mΩ supporting multi kW power levels with the highest efficiency for high-power applications such as data centres, inverters, motor drives and more.
Cambridge GaN Devices to Bring GaN Benefits to Motor Control
Cambridge GaN Devices (CGD) is partnering with Qorvo®, (Nasdaq: QRVO), a leading global provider of connectivity and power solutions, to develop a reference design and evaluation kit (EVK) that showcases GaN for motor control applications.
CGD Launches New GaN Power IC Packages With Enhanced Thermal Performance For Data Centers, Inverters & More
Cambridge GaN Devices (CGD) has announced two new packages for the company’s ICeGaN™ family of GaN power ICs that offer enhanced thermal performance and simplify inspection.
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